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Entities25 of 207,987
- large language modeltechnology1,048 mentions
- robotic manipulationmarket834 mentions
- artificial intelligencetechnology739 mentions
- reinforcement learningtechnology492 mentions
- density-functional theorytechnology386 mentions
- Transformertechnology372 mentions
- vision-language-action modeltechnology355 mentions
- agentic AItechnology353 mentions
- Vision-Language Modeltechnology321 mentions
- U.S. Food and Drug Administrationorganization320 mentions
- Microsoftorganization291 mentions
- Googleorganization277 mentions
- NVIDIAorganization265 mentions
- Model Context Protocoltechnology232 mentions
- machine learningtechnology204 mentions
- MarketsandMarketsorganization199 mentions
- Claudeproduct192 mentions
- AI agenttechnology188 mentions
- ChatGPTproduct178 mentions
- Anthropicorganization177 mentions
- integrated sensing and communicationtechnology176 mentions
- Amazon Web Services, Inc.organization174 mentions
- OpenAIorganization172 mentions
- diffusion modeltechnology170 mentions
- IBMorganization163 mentions
Entity
4H-SiC
material38 mentionslast seen Nov 13, 2026
A semiconductor material in which point defect systems were studied.
Relationships 26
- silicon vacancycomposed of4H-SiC99% confidence2 sources
- SiC/Si heterojunctioncomposed of4H-SiC96% confidence1 source
- oxygen vacancy defectdepends on4H-SiC95% confidence1 source
- PL6 oxygen vacancy centercomposed of4H-SiC95% confidence1 source
- SiC quantum nanophotonic arraycomposed of4H-SiC95% confidence1 source
- optical-injection-enhanced reverse-conducting IGBTdepends on4H-SiC95% confidence1 source
- on-chip nanoplasma switchcomposed of4H-SiC95% confidence1 source
- oxygen-vacancy quantum spin defectcomposed of4H-SiC93% confidence1 source
- silicon-vacancy quditdepends on4H-SiC93% confidence1 source
- color center cavity-QEDcomposed of4H-SiC90% confidence1 source
- high-voltage DC-DC reference designcomposed of4H-SiC90% confidence1 source
- epitaxial graphenecomposed of4H-SiC90% confidence1 source
- vanadiumcomposed of4H-SiC90% confidence1 source
- molecular dynamicsapplies to4H-SiC90% confidence1 source
- chemical vapor depositionapplies to4H-SiC85% confidence1 source
- aluminum scandium nitridedepends on4H-SiC85% confidence1 source
- boron acceptorapplies to4H-SiC85% confidence1 source
- aluminum acceptorapplies to4H-SiC85% confidence1 source
- grand-canonical first-principles stability mapapplies to4H-SiC85% confidence1 source
- single-photon emittercomposed of4H-SiC85% confidence1 source
- iron silicidecomposed of4H-SiC85% confidence1 source
- optically detected magnetic resonancedepends on4H-SiC85% confidence1 source
- 4H-SiCapplies toultrahigh-temperature material applications80% confidence1 source
- Eaton MVSST 2.0composed of4H-SiC80% confidence1 source
- transient electrothermal techniquedepends on4H-SiC80% confidence1 source
- single-crystal diamond membranecomposed of4H-SiC70% confidence1 source
Relationship
silicon vacancycomposed of4H-SiC
99% confidence2 supporting mentions
Either name opens that entity’s relationships.
Sources 2
- preprintarXivSep 19, 2026Device contacts as spin-state selectors for silicon vacancies in 4H-SiC
the silicon vacancy (V$_\mathrm{Si}$) in silicon carbide (SiC)
- preprintarXivFeb 27, 2026Robust Aluminum Nitride Passivation of Silicon Carbide with Near-Surface Quantum Emitters for Quantum Computing and Sensing Applications
a negatively charged silicon vacancy in SiC