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Entities25 of 207,987
- large language modeltechnology1,048 mentions
- robotic manipulationmarket834 mentions
- artificial intelligencetechnology739 mentions
- reinforcement learningtechnology492 mentions
- density-functional theorytechnology386 mentions
- Transformertechnology372 mentions
- vision-language-action modeltechnology355 mentions
- agentic AItechnology353 mentions
- Vision-Language Modeltechnology321 mentions
- U.S. Food and Drug Administrationorganization320 mentions
- Microsoftorganization291 mentions
- Googleorganization277 mentions
- NVIDIAorganization265 mentions
- Model Context Protocoltechnology232 mentions
- machine learningtechnology204 mentions
- MarketsandMarketsorganization199 mentions
- Claudeproduct192 mentions
- AI agenttechnology188 mentions
- ChatGPTproduct178 mentions
- Anthropicorganization177 mentions
- integrated sensing and communicationtechnology176 mentions
- Amazon Web Services, Inc.organization174 mentions
- OpenAIorganization172 mentions
- diffusion modeltechnology170 mentions
- IBMorganization163 mentions
Entity
gallium nitride
material22 mentionslast seen Nov 13, 2026
A semiconductor material in which the inverse orbital Hall effect was directly observed.
Relationships 20
- hydride vapor phase epitaxyapplies togallium nitride99% confidence2 sources
- ab initio calculationapplies togallium nitride99% confidence2 sources
- columnar porous GaN architecturecomposed ofgallium nitride95% confidence1 source
- on-chip nanoplasma switchcomposed ofgallium nitride95% confidence1 source
- phase-contrast microscopyapplies togallium nitride93% confidence1 source
- electrochemical etchingdepends ongallium nitride92% confidence1 source
- infrared absorption spectroscopyapplies togallium nitride92% confidence1 source
- Raman scatteringapplies togallium nitride92% confidence1 source
- surface diffusionapplies togallium nitride90% confidence1 source
- inverse orbital Hall effectapplies togallium nitride90% confidence1 source
- three-dimensional imaging of threading dislocationsdepends ongallium nitride88% confidence1 source
- rhombic spin-1 modelapplies togallium nitride88% confidence1 source
- ammonothermal growthapplies togallium nitride88% confidence1 source
- meta-atomcomposed ofgallium nitride85% confidence1 source
- random alloy channelcomposed ofgallium nitride85% confidence1 source
- Berry-curvature mechanismapplies togallium nitride85% confidence1 source
- spin-3/2 modelapplies togallium nitride85% confidence1 source
- gallium nitride lasercomposed ofgallium nitride85% confidence1 source
- gallium nitrideapplies toIII-V semiconductor growth and manufacturing75% confidence1 source
- single-crystal diamond membranecomposed ofgallium nitride70% confidence1 source
Relationship
ab initio calculationapplies togallium nitride
99% confidence2 supporting mentions
Either name opens that entity’s relationships.
Sources 2
- preprintarXivNov 12, 2026Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. II. Adsorption of nonmetal atoms (N, P, As, and Sb) on Ga-terminated surfaces
Ab initio calculations were used to simulate the adsorption processes on Ga-terminated surfaces of tetrahedral semiconductors: GaN
- preprintarXivNov 12, 2026Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. VII. Step kinetics
Ab initio calculations were used to simulate the kinetics of attachment of new segments of the crystalline lattice (pyramids) at steps on the nonmetal-terminated surface of tetrahedral semiconductors: GaN