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Entities25 of 207,987
- large language modeltechnology1,043 mentions
- robotic manipulationmarket824 mentions
- artificial intelligencetechnology739 mentions
- reinforcement learningtechnology491 mentions
- density-functional theorytechnology386 mentions
- Transformertechnology371 mentions
- agentic AItechnology353 mentions
- vision-language-action modeltechnology350 mentions
- U.S. Food and Drug Administrationorganization320 mentions
- Vision-Language Modeltechnology318 mentions
- Microsoftorganization291 mentions
- Googleorganization276 mentions
- NVIDIAorganization264 mentions
- Model Context Protocoltechnology232 mentions
- machine learningtechnology204 mentions
- MarketsandMarketsorganization199 mentions
- Claudeproduct192 mentions
- AI agenttechnology188 mentions
- ChatGPTproduct178 mentions
- Anthropicorganization177 mentions
- integrated sensing and communicationtechnology175 mentions
- Amazon Web Services, Inc.organization174 mentions
- OpenAIorganization172 mentions
- diffusion modeltechnology169 mentions
- IBMorganization163 mentions
Entity
hafnium oxide
material11 mentionslast seen Nov 10, 2026
A material studied for thermally stimulated depolarization phenomena in this experimental and theoretical work.
Relationships 17
- etching-flux-mediated single-centred nucleationdepends onhafnium oxide93% confidence1 source
- stress-induced ferroelectricitydepends onhafnium oxide93% confidence1 source
- magnetic domain wallapplies tohafnium oxide92% confidence1 source
- WOx/[HfO2-ZrO2] bilayercomposed ofhafnium oxide92% confidence1 source
- oxygen diffusionapplies tohafnium oxide92% confidence1 source
- field-effect transistorcomposed ofhafnium oxide92% confidence1 source
- polarization rotationapplies tohafnium oxide92% confidence1 source
- thin-film transistorcomposed ofhafnium oxide90% confidence1 source
- density-functional theoryapplies tohafnium oxide90% confidence1 source
- hafnium oxideapplies tomemory technology90% confidence1 source
- hafnium oxideapplies tosolid-state cooling90% confidence1 source
- thermally stimulated depolarizationapplies tohafnium oxide90% confidence1 source
- ferroelectric switchingapplies tohafnium oxide90% confidence1 source
- hafnium oxideapplies toenergy storage90% confidence1 source
- analog filamentary conductive-metal-oxide/HfOx resistive random access memorycomposed ofhafnium oxide90% confidence1 source
- multiphonon trap ionization mechanismapplies tohafnium oxide85% confidence1 source
- hafnium oxidedepends onmachine-learning molecular dynamics85% confidence1 source
Relationship
analog filamentary conductive-metal-oxide/HfOx resistive random access memorycomposed ofhafnium oxide
90% confidence1 supporting mentions
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Sources 1