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Ga-polar recessed-gate AlGaN/GaN HEMT

technology1 mentionslast seen Oct 28, 2026

High electron mobility transistor with recessed gate on sapphire substrate for W-band operation.

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Ga-polar recessed-gate AlGaN/GaN HEMT

Relationship

Ga-polar recessed-gate AlGaN/GaN HEMTcomposed ofAl0.35Ga0.65N

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