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Entities25 of 207,987
- large language modeltechnology1,048 mentions
- robotic manipulationmarket834 mentions
- artificial intelligencetechnology739 mentions
- reinforcement learningtechnology492 mentions
- density-functional theorytechnology386 mentions
- Transformertechnology372 mentions
- vision-language-action modeltechnology355 mentions
- agentic AItechnology353 mentions
- Vision-Language Modeltechnology321 mentions
- U.S. Food and Drug Administrationorganization320 mentions
- Microsoftorganization291 mentions
- Googleorganization276 mentions
- NVIDIAorganization264 mentions
- Model Context Protocoltechnology232 mentions
- machine learningtechnology204 mentions
- MarketsandMarketsorganization199 mentions
- Claudeproduct192 mentions
- AI agenttechnology188 mentions
- ChatGPTproduct178 mentions
- Anthropicorganization177 mentions
- integrated sensing and communicationtechnology176 mentions
- Amazon Web Services, Inc.organization174 mentions
- OpenAIorganization172 mentions
- diffusion modeltechnology170 mentions
- IBMorganization163 mentions
Entity
high-electron-mobility transistor
technology7 mentionslast seen Nov 13, 2026
A transistor type used to demonstrate the generalization and scalability of the proposed deep learning approach.
Relationships 17
- high-electron-mobility transistorcomposed ofsilicon dioxide99% confidence2 sources
- high-electron-mobility transistorcomposed ofAl0.6Ga0.4N95% confidence1 source
- high-electron-mobility transistorcomposed ofAl0.60Ga0.40N93% confidence1 source
- high-electron-mobility transistorcomposed ofAl₀.₇₆Ga₀.₂₄N93% confidence1 source
- high-electron-mobility transistorcomposed ofAl0.81Ga0.19N92% confidence1 source
- high-electron-mobility transistorcomposed ofAl0.86Ga0.14N92% confidence1 source
- high-electron-mobility transistorcomposed ofrecessed T-gate structure91% confidence1 source
- high-electron-mobility transistorcomposed ofPt/Au90% confidence1 source
- high-electron-mobility transistorapplies toX-band applications88% confidence1 source
- high-electron-mobility transistorapplies toX-band and Ka-band RF applications88% confidence1 source
- high-electron-mobility transistorapplies toextreme temperature electronics85% confidence1 source
- high-electron-mobility transistorapplies to5G wireless communication85% confidence1 source
- high-electron-mobility transistorapplies tosatellite communications85% confidence1 source
- high-electron-mobility transistorapplies tohigh-temperature electronics85% confidence1 source
- high-electron-mobility transistorapplies todefense and aerospace applications85% confidence1 source
- high-electron-mobility transistorapplies toradar systems85% confidence1 source
- monolithic microwave integrated circuitcomposed ofhigh-electron-mobility transistor75% confidence1 source
Relationship
high-electron-mobility transistorcomposed ofsilicon dioxide
99% confidence2 supporting mentions
Either name opens that entity’s relationships.
Sources 2
- preprintarXivNov 8, 2026Demonstration of High fmax (> 80 GHz) in Recessed-Gate and Passivated $\mathrm{Al_{0.60}Ga_{0.40}N}$ Channel RF HEMTs
The devices featured a recessed T-gate structure and $\mathrm{SiO_2}$ passivation
- preprintarXivNov 8, 2026$>3\text{ W/mm}$ Output Power $\mathrm{Al}_{0.61}\mathrm{Ga}_{0.39}\mathrm{N}$ Channel HEMT with $24.4\%$ Associated PAE at $10\text{ GHz}$
HEMT was fabricated using an $\mathrm{Al}_{0.76}\mathrm{Ga}_{0.24}\mathrm{N}$ barrier and an $\mathrm{Al}_{0.61}\mathrm{Ga}_{0.39}\mathrm{N}$ channel with thick $\mathrm{SiO}_2$ passivation