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Entities25 of 207,987
- large language modeltechnology1,048 mentions
- robotic manipulationmarket834 mentions
- artificial intelligencetechnology739 mentions
- reinforcement learningtechnology492 mentions
- density-functional theorytechnology386 mentions
- Transformertechnology372 mentions
- vision-language-action modeltechnology355 mentions
- agentic AItechnology353 mentions
- Vision-Language Modeltechnology321 mentions
- U.S. Food and Drug Administrationorganization320 mentions
- Microsoftorganization291 mentions
- Googleorganization277 mentions
- NVIDIAorganization265 mentions
- Model Context Protocoltechnology232 mentions
- machine learningtechnology204 mentions
- MarketsandMarketsorganization199 mentions
- Claudeproduct192 mentions
- AI agenttechnology188 mentions
- ChatGPTproduct178 mentions
- Anthropicorganization177 mentions
- integrated sensing and communicationtechnology176 mentions
- Amazon Web Services, Inc.organization174 mentions
- OpenAIorganization172 mentions
- diffusion modeltechnology170 mentions
- IBMorganization163 mentions
Entity
gallium phosphide
material7 mentionslast seen Nov 13, 2026
High-refractive-index material used as a model material for the metasurface.
Relationships 7
- ab initio calculationapplies togallium phosphide99% confidence2 sources
- high-refractive-index membrane metasurfacedepends ongallium phosphide93% confidence1 source
- surface diffusionapplies togallium phosphide90% confidence1 source
- k·p methodapplies togallium phosphide88% confidence1 source
- self-assembled metal nanoparticle nanostructuringapplies togallium phosphide85% confidence1 source
- star-shaped pore latticecomposed ofgallium phosphide85% confidence1 source
- gallium phosphideapplies toIII-V semiconductor growth and manufacturing75% confidence1 source
Relationship
ab initio calculationapplies togallium phosphide
99% confidence2 supporting mentions
Either name opens that entity’s relationships.
Sources 2
- preprintarXivNov 12, 2026Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. II. Adsorption of nonmetal atoms (N, P, As, and Sb) on Ga-terminated surfaces
Ab initio calculations were used to simulate the adsorption processes on Ga-terminated surfaces of tetrahedral semiconductors: GaP
- preprintarXivNov 12, 2026Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. VII. Step kinetics
Ab initio calculations were used to simulate the kinetics of attachment of new segments of the crystalline lattice (pyramids) at steps on the nonmetal-terminated surface of tetrahedral semiconductors: GaN, GaP