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Entities25 of 207,987
- large language modeltechnology1,043 mentions
- robotic manipulationmarket824 mentions
- artificial intelligencetechnology739 mentions
- reinforcement learningtechnology491 mentions
- density-functional theorytechnology386 mentions
- Transformertechnology371 mentions
- agentic AItechnology353 mentions
- vision-language-action modeltechnology350 mentions
- U.S. Food and Drug Administrationorganization320 mentions
- Vision-Language Modeltechnology318 mentions
- Microsoftorganization291 mentions
- Googleorganization276 mentions
- NVIDIAorganization264 mentions
- Model Context Protocoltechnology232 mentions
- machine learningtechnology204 mentions
- MarketsandMarketsorganization199 mentions
- Claudeproduct192 mentions
- AI agenttechnology188 mentions
- ChatGPTproduct178 mentions
- Anthropicorganization177 mentions
- integrated sensing and communicationtechnology175 mentions
- Amazon Web Services, Inc.organization174 mentions
- OpenAIorganization172 mentions
- diffusion modeltechnology169 mentions
- IBMorganization163 mentions
Entity
ab initio calculation
technology17 mentionslast seen Nov 13, 2026
Computational method used to characterize the multiferroic quantum dot.
Relationships 13
- ab initio calculationapplies toGaAs99% confidence2 sources
- ab initio calculationapplies togallium antimonide99% confidence2 sources
- ab initio calculationapplies togallium phosphide99% confidence2 sources
- ab initio calculationapplies togallium nitride99% confidence2 sources
- ab initio calculationdepends ondensity-functional theory93% confidence1 source
- machine learning interatomic potentialdepends onab initio calculation90% confidence1 source
- Earth's Core Atomistic Modeldepends onab initio calculation90% confidence1 source
- neural network interatomic potentialdepends onab initio calculation90% confidence1 source
- vapor growthdepends onab initio calculation88% confidence1 source
- pyramid growthdepends onab initio calculation85% confidence1 source
- ab initio calculationapplies toice VII85% confidence1 source
- ab initio calculationapplies toCuF285% confidence1 source
- ab initio calculationapplies toelectronic materials characterization75% confidence1 source
Relationship
ab initio calculationapplies togallium phosphide
99% confidence2 supporting mentions
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Sources 2
- preprintarXivNov 12, 2026Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. II. Adsorption of nonmetal atoms (N, P, As, and Sb) on Ga-terminated surfaces
Ab initio calculations were used to simulate the adsorption processes on Ga-terminated surfaces of tetrahedral semiconductors: GaP
- preprintarXivNov 12, 2026Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. VII. Step kinetics
Ab initio calculations were used to simulate the kinetics of attachment of new segments of the crystalline lattice (pyramids) at steps on the nonmetal-terminated surface of tetrahedral semiconductors: GaN, GaP