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Entities25 of 207,987
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- Transformertechnology372 mentions
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- U.S. Food and Drug Administrationorganization320 mentions
- Microsoftorganization291 mentions
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- Model Context Protocoltechnology232 mentions
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- Claudeproduct192 mentions
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- Anthropicorganization177 mentions
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- OpenAIorganization172 mentions
- diffusion modeltechnology170 mentions
- IBMorganization163 mentions
Entity
gallium antimonide
material4 mentionslast seen Nov 13, 2026
Semiconductor with nonmetal-terminated surface studied for surface diffusion.
Relationships 3
Relationship
ab initio calculationapplies togallium antimonide
99% confidence2 supporting mentions
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Sources 2
- preprintarXivNov 12, 2026Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. II. Adsorption of nonmetal atoms (N, P, As, and Sb) on Ga-terminated surfaces
Ab initio calculations were used to simulate the adsorption processes on Ga-terminated surfaces of tetrahedral semiconductors: GaSb
- preprintarXivNov 12, 2026Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. VII. Step kinetics
Ab initio calculations were used to simulate the kinetics of attachment of new segments of the crystalline lattice (pyramids) at steps on the nonmetal-terminated surface of tetrahedral semiconductors: GaN, GaP, GaAs and GaSb