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Entities25 of 207,987
- large language modeltechnology1,043 mentions
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- reinforcement learningtechnology491 mentions
- density-functional theorytechnology386 mentions
- Transformertechnology371 mentions
- agentic AItechnology353 mentions
- vision-language-action modeltechnology350 mentions
- U.S. Food and Drug Administrationorganization320 mentions
- Vision-Language Modeltechnology318 mentions
- Microsoftorganization291 mentions
- Googleorganization276 mentions
- NVIDIAorganization264 mentions
- Model Context Protocoltechnology232 mentions
- machine learningtechnology204 mentions
- MarketsandMarketsorganization199 mentions
- Claudeproduct192 mentions
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- Anthropicorganization177 mentions
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- OpenAIorganization172 mentions
- diffusion modeltechnology169 mentions
- IBMorganization163 mentions
Entity
GaAs
material19 mentionslast seen Nov 13, 2026
A III-V substrate used as a reference in comparative photoluminescence measurements.
Relationships 13
- ab initio calculationapplies toGaAs99% confidence2 sources
- orbital angular momentum transferapplies toGaAs90% confidence1 source
- GaAs waveguidecomposed ofGaAs90% confidence1 source
- surface diffusionapplies toGaAs90% confidence1 source
- quantum dot spin qubitcomposed ofGaAs88% confidence1 source
- micro-VCSELcomposed ofGaAs85% confidence1 source
- monolithic microwave integrated circuitcomposed ofGaAs85% confidence1 source
- microVCSELcomposed ofGaAs85% confidence1 source
- self-assembled metal nanoparticle nanostructuringapplies toGaAs85% confidence1 source
- snowflake-type phononic crystal cavitycomposed ofGaAs82% confidence1 source
- photonic interconnectdepends onGaAs80% confidence1 source
- crystalline silicon technologysupersedesGaAs75% confidence1 source
- GaAsapplies toIII-V semiconductor growth and manufacturing75% confidence1 source
Relationship
ab initio calculationapplies toGaAs
99% confidence2 supporting mentions
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Sources 2
- preprintarXivNov 12, 2026Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. II. Adsorption of nonmetal atoms (N, P, As, and Sb) on Ga-terminated surfaces
Ab initio calculations were used to simulate the adsorption processes on Ga-terminated surfaces of tetrahedral semiconductors: GaAs
- preprintarXivNov 12, 2026Universal model of the growth of III-V tetrahedral semiconductors on polar surfaces: pyramids and glue atoms. VII. Step kinetics
Ab initio calculations were used to simulate the kinetics of attachment of new segments of the crystalline lattice (pyramids) at steps on the nonmetal-terminated surface of tetrahedral semiconductors: GaN, GaP, GaAs